Environmental Expert: Indium tin oxide (ITO) is a solution of indium oxide and tin oxide which is found in a solid state. Typically, indium tin oxide has 90% of indium oxide and 10% of tin oxide by weight. When in thin layer it is colorless and transparent, while it forms a yellowish grey color when in bulk. Indium tin oxide is a member of transparent conducting oxide and is a widely used transparent conduction oxide owing to its excellent physical properties.
Browse Report : http://www.transparencymarketresearch.com/indium-tin-oxide.html
Indium tin oxide accounted for approximately 97% of the overall market for transparent conducting oxides in 2011. The steady growth of transparent and flexible electronics is the major factor which is propelling the growth of the global indium oxides market. However, the growing R&D in developing alternatives for indium tin oxide is acting as one of the major restraints for the market.
Asia is the leading producer and consumer of indium tin oxide due to the huge electronics market in China, Japan, and Korea. However, countries like Canada, Peru and Belgium also represent strong markets for ITO and are in the list of leading producers of ITO. Companies like Keeling Walker and Kurt J Lesker Co. among some others are the major companies operating in the global market.
This report is a complete study of current trends in the market, industry growth drivers, and restraints. It provides market projections for the coming years. It includes analysis of recent developments in technology, Porter’s five force model analysis and detailed profiles of top industry players. The report also includes a review of micro and macro factors essential for the existing market players and new entrants along with detailed value chain analysis.
Friday, May 10, 2013
Thursday, May 9, 2013
Nano-silver-carbon colloids replace ITO in LCD displays
Espacenet - Bibliographic data: A liquid crystal substrate, a manufacturing method thereof, and a liquid crystal display (LCD) device. The liquid crystal substrate comprises an electrode (148). The electrode (148) is made of transparent conductive colloid. The transparent conductive colloid replaces an indium tin oxide (ITO) film as the electrode. The transparent colloid (such as nano-silver colloid and carbon nanotube colloid) undergoes coating and curing before forming a film. The cost is low, and the process is simple. Only coating and drying are performed before etching, so that costs incurred by the equipment for Physical Vapor Deposition (PVD) during preparation of ITO are reduced, the factory (FAB) space is effectively used, the use of metals such as indium and tin is reduced, the equipment costs and waste liquid treatment for manufacturing an LCD are reduced, the process time is reduced, and the number of outputs is increased.
Nippon Steel Tin in Stainless Steel patent
Espacenet The present invention addresses the problems of not only improving the non-corroding properties and non-rusting properties of a chromium-containing ferritic stainless steel but also improving the non-ridging properties, while directing attention to tin. A relationship between Ap, which indicates the proportion of the ? phase as measured at 1,100 C and which is determined from given components, and tin in ferritic stainless steels that have a two-phase structure composed of a ? in a hot-rolling temperature range is derived. Tin is added in a proper amount, and hot rolling is conducted at 1,100 C or higher so that the total rolling reduction is 15% or more. Thus, a ferritic stainless-steel sheet which had satisfactory non-ridging properties, was excellent in terms of non-corroding properties and non-rusting properties, and was applicable to general durable consumer goods was obtained. 0.060=Sn=0.634-0.0082Ap 10=Ap=70.
Electrical and catalytic properties of cerium-tin mixed oxides in CO depollution reaction
Scopus: AC electrical conductivity of CeO2 catalyst samples containing 5, 10 and 20wt% SnO2 prepared by co-precipitation and of SnO2 and CeO2 pure oxides (prepared under the same conditions) was measured in operando conditions. The measurements were carried out at a frequency of 1592Hz in the temperature range from room temperature up to 400�C, using successively programmed heating-cooling cycles under various atmospheres. The catalyst samples were tested in the catalytic oxidation of CO in presence and in absence of oxygen in the same temperature range (30-400�C). An improved deep oxidation of carbon monoxide has been found with these co-precipitated mixed oxides compared to pure components, leading to a better catalytic activity at lower temperature. The band gap energies were estimated based on the UV-Vis spectra and correlated with XRD results and AC electrical conductivity data. These results show the influence of the tin oxide on the electrical properties and oxygen mobility of the catalytic systems studied and on the surface behaviour of ceria
Yunnan Tin Group Saw Sharp Profit Decline in 2012 amid Falling Prices and Rising Inventories - Shanghai Metals Market
SMM Annual Reports: According to Yunnan Tin Group’s annual report for 2012, the company produced 39,791 mt of tin ingot last year, up 12.2%, and 17,385 mt of tin chemical products, up 22.8%. Its tin semis output was 19,629 mt in 2012, rising 8.8% from 2011. Despite increasing output, the falling tin prices and sluggish demand left its profit down 98.55% last year. Yunnan Tin Group’s tin ingot inventories increased 79% to 3,921 mt in 2012, while sales only edged up 5.7% to 39,860 mt, reflecting the depressed demand. The poor sales resulted in a surge in fi......
Cadmium tin oxide solar cell
Espacenet: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.
COATED ARTICLE WITH LOW-E COATING INCLUDING TIN OXIDE INTERLAYER
Espacenet A coated article is provided which may be heat treated (e.g., thermally tempered) in certain instances. In certain example embodiments, an interlayer of or including a metal oxide such as tin oxide is provided under an infrared (IR) reflecting layer so as to be located between respective layers comprising silicon nitride and zinc oxide. It has been found that the use of such a tin oxide inclusive interlayer results in significantly improved mechanical durability, thermal stability and/or haze characteristics.
US2013108848 (A1) - COATED ARTICLE WITH LOW-E COATING INCLUDING TIN OXIDE INTERLAYER
Inventor(s): NUNEZ-REGUEIRO JOSE [US]; DIETRICH ANTON [CH]; LINGLE PHILIP J [US]; THOMSEN SCOTT V [US]; WANG HONG [CN]; LEMMER JEAN-MARC [US]; BASSETT NANCY [US]; CORSNER BRYCE [US] +
Applicant(s): GUARDIAN INDUSTRIES [US]; GUARDIAN INDUSTRIES [US] +
US2013108848 (A1) - COATED ARTICLE WITH LOW-E COATING INCLUDING TIN OXIDE INTERLAYER
Inventor(s): NUNEZ-REGUEIRO JOSE [US]; DIETRICH ANTON [CH]; LINGLE PHILIP J [US]; THOMSEN SCOTT V [US]; WANG HONG [CN]; LEMMER JEAN-MARC [US]; BASSETT NANCY [US]; CORSNER BRYCE [US] +
Applicant(s): GUARDIAN INDUSTRIES [US]; GUARDIAN INDUSTRIES [US] +
US2011042355 TIN FREE SILYL-TERMINATED POLYMERS
US2011042355: tin-free catalyst to form an isocyanate reacted hydrosilylated polymer, and optionally reacting the isocyanate reacted hydrosilylated polymer with a polyol having a nominal functionality of at least 2 to form a polyol reacted crosslinkable silane-terminated polymer.
WO/2012/003212 International Application No.: PCT/US2011/042355
Publication Date: 05.01.2012 International Filing Date: 29.06.2011
IPC:
C08G 18/18 (2006.01), C08G 18/20 (2006.01), C08G 18/22 (2006.01), C08G 18/28 (2006.01), C08G 18/48 (2006.01), C08G 18/71 (2006.01), C08G 18/76 (2006.01), C08G 18/83 (2006.01), C08G 77/46 (2006.01)
Applicants: DOW GLOBAL TECHNOLOGIES LLC [
WO/2012/003212 International Application No.: PCT/US2011/042355
Publication Date: 05.01.2012 International Filing Date: 29.06.2011
IPC:
C08G 18/18 (2006.01), C08G 18/20 (2006.01), C08G 18/22 (2006.01), C08G 18/28 (2006.01), C08G 18/48 (2006.01), C08G 18/71 (2006.01), C08G 18/76 (2006.01), C08G 18/83 (2006.01), C08G 77/46 (2006.01)
Applicants: DOW GLOBAL TECHNOLOGIES LLC [
Subscribe to:
Posts (Atom)