Sol–gel synthesis of SnO2–MgO nanoparticles and their photocatalytic activity towards methylene blue degradation

Sol–gel synthesis of SnO2–MgO nanoparticles and their photocatalytic activity towards methylene blue degradation:

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A simple sol–gel method for the synthesis of SnO₂–MgO nanoparticles is reported.

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Band gap of SnO₂ can be tuned by varying the magnesium content in SnO₂–MgO.

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SnO₂–MgO shows good photocatalytic activity towards degradation of methylene blue.

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Influence of In doping on the structural, photo-luminescence and alcohol response characteristics of the SnO2 nanoparticles

Influence of In doping on the structural, photo-luminescence and alcohol response characteristics of the SnO2 nanoparticles:

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In-doped SnO₂ samples show smaller crystallinity with crystallite size: ∼7–9 nm.

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EDX analyses confirm the incorporation of indium ions in the SnO₂ lattice.

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Raman spectra are consistent with the results of XRD and SAED pattern.

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Alcohol response has been found to increase with the indium dopant concentration.

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3 at% In-doped sample exhibits maximum response (96.5%) to propan-2-ol at 250 °C.

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SnO2 nanorods grown on MCMB as the anode material for lithium ion battery

SnO2 nanorods grown on MCMB as the anode material for lithium ion battery:

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hemical precipitation and hydrothermal reaction were adopted to prepare the SnO2 nanorods/MCMB composite. Firstly Mesophase carbon micro beads (MCMB) were treated by the mixture of concentrated sulphuric acid and nitric acid, and then deposited with a little amount of SnO2 though chemical precipitation to form the primitive SnO2/MCMB composite. In hydrothermal condition and at certain concentration of Na2SnO3, such primitive composite turned into the SnO2 nanorods/MCMB composite eventually. SEM figures showed that SnO2 nanorods grow on the surface of MCMB extensively; TEM and XRD characterization indicated SnO2 nanorods presenting good single crystalline structure with 50nm in diameter and 400-500nm in length. The following electrochemical performance showed that the final composite exhibited initial discharge capacity of 1321.25mAh·g-1. Reversible capacity of 505.8mAh·g-1 was observed after 50 discharge/charge cycles at the constant current density of 100 mA·g-1.

Effects of Sn addition on phase formation and mechanical properties of TiCu-based bulk metallic glass composites

Effects of Sn addition on phase formation and mechanical properties of TiCu-based bulk metallic glass composites:

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Effects of Sn on mechanical properties of TiCu-based BMG composites were studied.
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Formation of brittle CuTi2 and ZrTiCu2 intermetallic compounds were suppressed.
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Excessive Sn addition deteriorated glass forming ability.
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Large plasticity and strong work-hardening in the BMG composites were obtained.
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Related mechanisms for the enhanced properties were discussed.
Abstract
A unique combination of macroscopic properties including high strength, large plasticity and strong work-hardening behavior was realized in TiCu-based bulk metallic glass (BMG) composite with proper addition of Sn. It was found that proper addition of Sn induced formation of BMG composites consisting of a single B2-TiCu phase via suppressing precipitation of the brittle CuTi2 and ZrTiCu2 intermetallic compounds. With excessive Sn addition, however, glass forming ability of the resultant alloys was severely decreased due to formation of additional Zr5Sn3 phase. Moreover, desirable elastic mismatch (e.g., Young's modulus and hardness) between the reinforcing crystalline phase and amorphous matrix, resulted from the Sn addition, remarkably accommodated large plasticity and strong work-hardening capability of the current BMG composites.

http://www.sciencedirect.com/science/article/pii/S0966979513001477

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Synthesis of Cu2ZnSnS4 films from co-electrodeposited Cu-Zn-Sn precursors and their microstructural and optical properties

Synthesis of Cu2ZnSnS4 films from co-electrodeposited Cu-Zn-Sn precursors and their microstructural and optical properties:

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A novel electrolyte formula and co-electrodeposition parameters are presented.
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The CZTS films are prepared from co-electrodeposited precursors.
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CZTS film forms by reaction among binary and ternary sulfides at high temp.
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Photoluminescence was obtained from prepared CZTS films at 550 °C for 1 h.
Abstract
The Cu2ZnSnS4 (CZTS) films were successfully prepared using a process of co-electro-deposition of Cu-Sn-Zn precursors by a novel electrolyte formula and optimized parameters on Mo substrates, succeeded by annealing in saturated sulfur atmosphere. The optimized electrolyte formula was achieved as 0.16 M CuSO4·5H2O, 0.33 M ZnSO4, 0.08 M SnCl2·2H2O, 2.25 M NaOH, 1.36 M C6H5Na3O7 and 1.00 M C4H6O6 under a voltage of -1.62 V for 5 min. Cu3Sn, Cu6Sn5 and Cu4Zn alloys were firstly synthesized at temperature lower than 300 °C. At 300 °C, these alloys decomposed in sulfur atmosphere and CuS, SnS and ZnS binary phases were formed. Ternary Cu4SnS6 formed through reaction between CuS and SnS above 350 °C. Finally, the CZTS films were synthesized through reaction among CuS, SnS, ZnS and Cu4SnS6 sulfides. CZTS films synthesized at 550 °C for 1 h had an average atomic ratio of 0.96 and 1.1 for Cu/(Zn + Sn) and Zn/Sn, respectively. The photoluminescence peaking at about 1.55 eV in the prepared samples demonstrated a high quality of the CZTS film.

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Global Indium Tin Oxide (ITO) Market -Industry Analysis, Size, Share, Growth, Trends, And Forecast, 2012 - 2018 on Environmental Expert

Environmental Expert: Indium tin oxide (ITO) is a solution of indium oxide and tin oxide which is found in a solid state. Typically, indium tin oxide has 90% of indium oxide and 10% of tin oxide by weight. When in thin layer it is colorless and transparent, while it forms a yellowish grey color when in bulk. Indium tin oxide is a member of transparent conducting oxide and is a widely used transparent conduction oxide owing to its excellent physical properties.

Browse Report : http://www.transparencymarketresearch.com/indium-tin-oxide.html

Indium tin oxide accounted for approximately 97% of the overall market for transparent conducting oxides in 2011. The steady growth of transparent and flexible electronics is the major factor which is propelling the growth of the global indium oxides market. However, the growing R&D in developing alternatives for indium tin oxide is acting as one of the major restraints for the market.

Asia is the leading producer and consumer of indium tin oxide due to the huge electronics market in China, Japan, and Korea. However, countries like Canada, Peru and Belgium also represent strong markets for ITO and are in the list of leading producers of ITO. Companies like Keeling Walker and Kurt J Lesker Co. among some others are the major companies operating in the global market.

This report is a complete study of current trends in the market, industry growth drivers, and restraints. It provides market projections for the coming years. It includes analysis of recent developments in technology, Porter’s five force model analysis and detailed profiles of top industry players. The report also includes a review of micro and macro factors essential for the existing market players and new entrants along with detailed value chain analysis.

Nano-silver-carbon colloids replace ITO in LCD displays

Espacenet - Bibliographic data: A liquid crystal substrate, a manufacturing method thereof, and a liquid crystal display (LCD) device. The liquid crystal substrate comprises an electrode (148). The electrode (148) is made of transparent conductive colloid. The transparent conductive colloid replaces an indium tin oxide (ITO) film as the electrode. The transparent colloid (such as nano-silver colloid and carbon nanotube colloid) undergoes coating and curing before forming a film. The cost is low, and the process is simple. Only coating and drying are performed before etching, so that costs incurred by the equipment for Physical Vapor Deposition (PVD) during preparation of ITO are reduced, the factory (FAB) space is effectively used, the use of metals such as indium and tin is reduced, the equipment costs and waste liquid treatment for manufacturing an LCD are reduced, the process time is reduced, and the number of outputs is increased.